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| SLA5022 Absolute maximum ratings Symbol VM IO IOP VGSS IB PT Ratings 60 6 (PW100ms) 10 (PW1ms) 10 -0.5 5 (Ta=25C) 35 (Tc=25C) 25 3.57 1000 (Between fin and lead pin, AC) 150 -40 to +150 PNP Darlington + N-channel MOSFET 3-phase motor drive (Ta=25C) External dimensions A *** SLA Electrical characteristics (Sink : N channel MOSFET) Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr Specification min typ max 60 500 250 1.0 2.0 3.1 4.6 0.17 0.22 0.25 0.30 400 160 80 50 1.1 1.5 150 Unit V nA A V S W pF pF ns ns V ns (Ta=25C) Unit V A A V A W C/W C/W Vrms C C Conditions ID=250A, VGS=0V VGS=10V VDS=60V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=30V, VGS=5V ISD=4A, VGS=0V IF=100mA j-a j-c VISO Tj Tstg sEquivalent circuit diagram 1 R1 R2 VM 2 8 3 OUT1 9 7 OUT2 10 OUT3 4 6 5 11 12 R1: 3k typ R2: 80 typ Characteristic curves (N-channel) VDS-ID Characteristics (Typical) 10 10V VGS-ID Temperature Characteristics (Typical) 10 IDS-RDS(ON) Characteristics (Typical) 0.3 (VDS=10V) 8 4V 8 4V ID (A) 6 3.5V 6 ID (A) (ON) () 0.2 4 4 TC=-40C 25C RDS VGS=10V 0.1 VGS=3V 2 2 125C 0 0 2 4 6 8 10 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 7 8 9 10 VDS (V) VGS (V) ID (A) ID-Re(yfs) Temperature Characteristics (Typical) 10 VDS=10V TC-RDS(ON) Characteristics (Typical) (ID=2.5A) 0.4 VDS-Cpacitance Characteristics (Typical) 1000 Ciss VGS=0V f=1MHz 5 500 C 12 4V TC () =- 40 5 C Capacitance (pF) 0.3 Re (yfs) (S) Coss (ON) 0.2 VGS=10V 100 1 25C RDS 50 Crss 0.1 0.5 0.3 0.05 0 -40 0.1 0.5 1 5 10 0 50 100 150 10 0 10 20 30 40 50 ID (A) TC (C) VDS (V) VSD-IDR Characteristics (Typical) 10 20 Safe Operating Area (SOA) (TC=25C) 0 10 ID (pulse) max s 10 ED 8 M 1m s m 10 5 (O N ) IT s LI ot sh (1 ) IDR (A) ID (A) 4V VGS=0V 10V 1 4 0.5 2 0 0 0.5 1.0 1.5 0.1 0.5 R 6 D S 1 5 10 50 100 VSD (V) VDS (V) 60 SLA5022 Electrical characteristics (Source: PNP transistor) Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC trr ton tstg tf fT Cob 1.0 1.0 1.4 0.6 120 150 -1 -60 2000 5000 12000 -1.5 -2.0 2.0 V V V Specification min typ max -10 -5 Unit (Ta=25C) Conditions VCB=-60V VEB=-6V IC=-25mA VCE=-4V, IC=-4A IC=-4A, IB=-10mA IFEC=4A IF=0.5A VCC -25V, IC=-4A, IB1=-IB2=-10mA VCE=-12V, IE=1A VCB=-10V, f=1MHz A mA V s s s s MHz pF Characteristic curves (PNP) IC-VCE Characteristics (Typical) -12 IB=-10mA -5 mA hFE-IC Characteristics (Typical) 20000 hFE-IC Temperature Characteristics (Typical) 20000 10000 (VCE=-4V) (VCE=-4V) -3mA -10 -2mA 10000 typ -8 5000 5000 IC (A) hFE -6 -1mA hFE =1 Ta 25 C 75 -4 -0.5mA 1000 1000 C C 25 -3 C 0 -2 500 500 0 0 -2 -4 -6 200 -0.1 -0.5 -1 -5 -10 200 -0.1 -0.5 -1 -5 -10 VCE (V) IC (A) IC (A) VCE(sat)-IC Temperature Characteristics (Typical) -3 VCE(sat)-IB Characteristics (Typical) -3 IC-VBE Temperature Characteristics (Typical) -12 (IC / IB=1000) (VCE=-4V) -10 VCE (sat) (V) VCE (sat) (V) -2 -2 -8 IC (A) -6 IC=-8A Ta=-30C -1 75C 125C IC=-2A -2 0 -0.5 -1 -5 -10 -20 0 -0.1 -0.3 -0.5 -1 -5 -10 -50 -100 -200 0 0 -1 Ta= 125 C 75 C 25C -30 C 25C -1 IC=-4A -4 -2 -3 IC (A) IB (mA) VBE (V) j-a-PW Characteristics 20 -20 Safe Operating Area (SOA) 40 35 30 25 20 15 PT-Ta Characteristics With Silicone Grease Natural Cooling All Circuits Operating 10 -10 10 -5 1m m 10 s 0 s s ch-c (C / W) IC (A) 5 ith W PT (W) In fin ite He -1 -0.5 at sin k 10 1 Single Pulse Without Heatsink Ta=25C 5 0 0 Without Heatsink 0.5 1 5 10 50 100 500 1000 -0.1 -3 -5 -10 -50 -100 PW (mS) VCE (V) 50 100 150 Ta (C) 61 |
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